Performance and fabrication of GaN/AlGaN Power MMIC at 10 GHz

2005 International Conference on Compound Semiconductor Manufacturing Technology

Volumn , Issue , 2005, Pages

  Benkhelifa, F ^a   Kiefer, R ^a   Muller S ^a   Raay, F Van ^a   Quay, R ^a   Sah, R E ^a   Dammann, M ^a   Mikulla, M ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAN/ALGAN; HEMT TECHNOLOGIES; LINEAR GAIN; MAXIMUM OUTPUT POWER; ON-WAFER; PULSED MODE; SIC SUBSTRATES;

POWER AMPLIFIERS; SILICON CARBIDE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 84887382419     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M.Chavarkar, T. Wisleder, U. K. Mishra and P. Parikh, " 30- W/mm GaN HEMTs by Field Plate Optimization " IEEE Electron device letters, vol. 25, no 3, pp. 117 - 119, March 2004.
2. B.M. Green, V. Tilak, S. Lee, H. Kim, J.A. Smart, K.J. Webb, J.R. Shealy and L.F. Eastman, " High-power broad-band AlGaN/GaN HEMT MMIC on SiC substrate " IEEE Transaction on Microwave Theory and Techniques, vol.49, no 12, pp. 2486 - 2493, December 2001.
3. R. Behtash, H.Tobler, F.-J. Berlec, V. Ziegler, H. Leier, R.S. Balmer, T. Martin, M. Neuburger and H. Schumacher, "MMIC power amplifier based on AlGaN/GaN HEMTs at 10 GHz " IEE Electronics Letters, vol. 40, no 9, pp. 564 - 566, 29th April 2004.