460-nm InGaN-based LEDs grown on fully inclined hemisphere-shape-patterned sapphire substrate with submicrometer spacing

IEEE Photonics Technology Letters

Volumn 21, Issue 19, 2009, Pages 1366-1368

  Chang, Chia Ta ^a   Hsiao, Shih Kuang ^a   Chang, Edward Yi ^a   Hsiao, Yu Lin ^a   Huang, Jui Chien ^a   Lu, Chung Yu ^a   Chang, Huang Choung ^b   Cheng, Kai Wen ^b   Lee, Ching Ting ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Ulvac Taiwan Inc   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Edge threading dislocations; Light emitting diodes (LEDs); Patterned sapphire; Submicrometer

Indexed keywords

EDGE THREADING DISLOCATIONS; FORWARD CURRENTS; GAN LAYERS; INCLINED FACETS; INGAN-BASED LED; LIGHT EXTRACTION; LIGHT OUTPUT POWER; LIGHT-EMITTING DIODES (LEDS); OUTPUT POWER; PATTERNED SAPPHIRE; PATTERNED SAPPHIRE SUBSTRATE; PURE EDGE; ROCKING CURVES; SAPPHIRE SUBSTRATES; SUBMICROMETER; SUBMICROMETERS;

CORUNDUM; CURRENT DENSITY; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; SAPPHIRE; SEMICONDUCTING GALLIUM; SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 70349596070     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2026728     Document Type: Article

References (10)

1. A. Usui, H. Sunakawa, A. Sakai, and A. A. Yamaguchi, "Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy," Jpn. J. Appl. Phys., vol. 36, no. 7B, pp. L899-L902, Jul. 1997.
2. M. Iwaya, T. Takeuchi, S. Yamaguchi, C. Wetzel, H. Amano, and I. Akasaki, "Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN," Jpn. J. Appl. Phys., vol. 37, pt. 1, pp. L316-L318, Mar. 1998.
3. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode," Jpn. J. Appl. Phys., vol. 41, no. 12B, pp. L1431-L1433, Dec. 2002.
4. D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, "Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates," IEEE Photon. Technol. Lett., vol. 17, no. 2, pp. 288-290, Feb. 2005.
5. Y. J. Lee, H. C. Kuo, T. C. Lu, B. J. Su, and S. C. Wang, "Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates," J. Electrochem. Soc., vol. 153, no. 12, pp. G1066-G1111, 2006.
6. J. H. Lee, J. T. Oh, Y. C. Kim, and J. H. Lee, "Stress reduction and enhanced extraction efficiency of GaN-based LED grown on cone-shapepatterned sapphire," IEEE Photon. Technol. Lett., vol. 20, no. 18, pp. 1563-1565, Sep. 15, 2008.
7. W. K. Wang, D. S. Wuu, S. H. Lin, P. H, R. H. Horng, T. C. Hsu, D. T. C. Huo, M. J. Jou, Y. H. Yu, and A. Lin, "Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates," IEEE J. Quantum Electron., vol. 41, no. 11, pp. 1403-1409, Nov. 2005.
8. B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, "Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films," Appl. Phys. Lett., vol. 68, no. 5, pp. 643-645, Jan. 1996.
9. D. Kapolnek, X. H. Wu, B. Heying, S. Keller, U. K. Mishra, S. P. Den- Baars, and J. S. Speck, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire," Appl. Phys. Lett., vol. 67, no. 11, pp. 1541-1543, Sep. 1995.
10. H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G.Wang, "Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching," Solid-State Electron., vol. 52, pp. 962-967, Feb. 2008.