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Applied Physics Express

Volumn 3, Issue 12, 2010, Pages

Eu-doped GaN films grown by phase shift epitaxy

(2) Zhong, Mingyu a Steckl, Andrew J a

a 705 Engineering Research Center (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EU-DOPED GAN; GROWTH CYCLE; PHOTOLUMINESCENCE EFFICIENCY; PL EFFICIENCY; THIN FILM GROWTH TECHNIQUES;

DOPING (ADDITIVES); EPITAXIAL GROWTH; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; PHASE SHIFT;

EUROPIUM;

EID: 78650893601 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.121002 Document Type: Article

Times cited : (8)

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