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Volumn 240, Issue 3-4, 2002, Pages 382-388

Growth of Eu-doped GaN by gas source molecular beam epitaxy and its optical properties

(5) Li, Zhiqiang a Bang, Hyungjin a Piao, Guanxi a Sawahata, Junji a Akimoto, Katsuhiro a

Author keywords

A1. Atomic force microscopy; A1. High resolution X ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B1. Rare earth compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; PHOTOLUMINESCENCE; POSITIVE IONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

GAS SOURCES;

MOLECULAR BEAM EPITAXY;

EID: 0036570492 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)00952-1 Document Type: Article

Times cited : (52)

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