Piezoelectric characteristic of nanocrystalline AlN films obtained by pulsed laser deposition at room temperature

Applied Physics Letters

Volumn 97, Issue 25, 2010, Pages

  Cibert, C ^a,c   Dutheil, P ^a   Champeaux, C ^a   Masson, O ^a   Trolliard, G ^a   Ttard F ^b   Catherinot, A ^a  

^a UNIVERSITY OF LIMOGES   (France)

^b UNIVERSITÉ PARIS 13   (France)

^c UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN FILMS; ALN NANOPARTICLES; FLUENCES; HIGHER TEMPERATURES; MATRIX; NANOCRYSTALLINES; PIEZOELECTRIC CHARACTERISTICS; PIEZOELECTRIC COEFFICIENT; PIEZOELECTRIC PROPERTY; PIEZOELECTRIC RESPONSE; ROOM TEMPERATURE;

ACOUSTICS; ALUMINUM COATINGS; ALUMINUM NITRIDE; AMORPHOUS FILMS; DEPOSITION; NANOPARTICLES; NITRIDES; PIEZOELECTRICITY; PULSED LASER DEPOSITION;

PULSED LASERS;

EID: 78650732311     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3527924     Document Type: Article

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