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Volumn , Issue , 2010, Pages

Design and evaluation of SOI devices for radiation environments

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EID: 78650561475     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2010.5641470     Document Type: Conference Paper
Times cited : (14)

References (23)
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    • O. Flament, A. Torres, and V. Ferlet-Cavrois, "Bias dependence of FD transistor response to total dose irradiation," IEEE Trans. Nucl. Sci., vol. 50, pp. 2316-2321, 2003.
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    • Tihanyi, J.1    Schlotterer, H.2
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    • Heavy-ion-induced digital single event transients in a 180 nm fully depleted SOI process
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.