Heavy-ION-induced digital single event transients in a 180 nm fully depleted SOI process

IEEE Transactions on Nuclear Science

Volumn 56, Issue 6, 2009, Pages 3483-3488

  Gadlage, Matthew J ^a   Gouker, Pascale ^b   Bhuva, Bharat L ^a   Narasimham, Balaji ^c   Schrimpf, Ronald D ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b MIT LINCOLN LABORATORY   (United States)

^c BROADCOM CORPORATION   (United States)

Author keywords

Heavy ions; Ion radiation effects; Silicon on insulator technology; Single event transient; Single event upset (SEU)

Indexed keywords

BODY CONTACTS; BODY-TIES; BULK TECHNOLOGIES; DIGITAL SINGLE EVENT TRANSIENTS; FULLY DEPLETED SOI; ION RADIATION EFFECTS; PULSE BROADENING; PULSE WIDTH; SINGLE EVENT; SINGLE EVENT TRANSIENTS; SINGLE EVENT UPSET (SEU); SINGLE EVENT UPSETS; SPACE-BASED SYSTEMS; TCAD SIMULATION;

DIGITAL INTEGRATED CIRCUITS; ELECTRIC NETWORK ANALYSIS; HEAVY IONS; MICROSENSORS; RADIATION EFFECTS; STATIC RANDOM ACCESS STORAGE; TECHNOLOGY; TRANSIENT ANALYSIS; URANIUM POWDER METALLURGY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 72349084353     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2033688     Document Type: Conference Paper

References (10)

1. P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, and J. R. Schwank, "Production and propagation of single-event transients in high-speed digitallogic ICs," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3278-3284, Dec. 2004.
2. V. Ferlet-Cavrois, P. Paillet, M. Gaillardin, D. Lambert, J. Baggio, J. R. Schwank, G. Vizkelethy, M. R. Shaneyfelt, K. Hirose, E. W. Blackmore, O. Faynot, C. Jahan, and L. Tosti, "Statistical analysis of the charge collected in SOI and bulk devices under heavy ion and proton irradiatION-Implications for digital SETs," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3242-3252, Dec. 2006.
3. P. Gouker, J. Brandt, P. Wyatt, B. Tyrrell, A. Soares, J. Knecht, C. Keast, D. McMorrow, B. Narasimham, M. Gadlage, and B. Bhuva, "Generation and propagation of single event transients in 0.18 μm fully depleted SOI," IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 2854-2860, Dec. 2008.
4. B. Narasimham, V. Ramachandran, B. L. Bhuva, R. D. Schrimpf, A. F. Witulski, W. T. Holman, L. W. Massengill, J. D. Black, W. H. Robinson, and D. McMorrow, "On-chip characterization of single event transient pulse widths," IEEE Trans. Dev. Mater. Reliab., vol. 6, pp. 542-549, 2006.
5. K. P. Rodbell, D. F. Heidel, H. H. Tang, M. S. Gordon, P. Oldiges, and C. E. Murray, "Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2474-2479, Dec. 2007.
6. B. Narasimham, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, M. J. Gadlage, O. A. Amusan, W. T. Holman, A. F. Witulski, W. H. Robinson, J. D. Black, J. M. Benedetto, and P. H. Eaton, "Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2506-2511, Dec. 2007.
7. T. Makino, D. Kobayashi, K. Hirose, Y. Yanagawa, H. Saito, H. Ikeda, D. Takahashi, S. Ishii, M. Kusano, S. Onoda, T. Hirao, and T. Ohshima, "LET dependence of single event transient pulse-widths in SOI logic cell," IEEE Trans. Nucl. Sci., vol. 56, no. 1, pp. 202-207, Feb. 2009.
8. B. Narasimham, "Characterization of heavy-ion, neutron and alpha-particle-induced single-event transient pulse widths in advanced CMOS technologies" Ph.D. dissertation, Electr. Eng. and Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, 2008 [Online]. Available: http://www.etd. library.vanderbilt.edu
9. L. W. Massengill and P. W. Tuinenga, "Single-event transient pulse propagation in digital CMOS," IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 2861-2871, Dec. 2008.
10. M. J. Gadlage, R. D. Schrimpf, B. Narasimham, B. L. Bhuva, P. H. Eaton, and J. M. Benedetto, "Effect of voltage fluctuations on the single event transient response of deep submicron digital circuits," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2495-2499, Dec. 2007.