Modeling the radiation response of fully-depleted SOI n-channel MOSFETs

IEEE Transactions on Nuclear Science

Volumn 56, Issue 4, 2009, Pages 2247-2250

  Esqueda, I S ^a   Barnaby, H J ^a   McLain, M L ^a   Adell, P C ^b   Mamouni, F E ^c   Dixit, S K ^c   Schrimpf, R D ^c   Xiong, W ^d  

^a Arizona State University   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

Band to band tunneling (BBT); Fully depleted silicon on Insulator (FDSOI); Metal oxide semiconductor field effect transistor (MOSFET); Total ionizing dose (TID)

Indexed keywords

ACCURATE MODELING; ANALYTICAL MODEL; BACK-GATE; BAND TO BAND TUNNELING; BAND-TO-BAND TUNNELING (BBT); BURIED OXIDES; CLOSED-FORM EXPRESSION; COMBINED EFFECT; ELECTRICAL CHARACTERISTIC; FULLY DEPLETED; FULLY-DEPLETED SILICON ON INSULATOR (FDSOI); METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET); MOSFETS; N-CHANNEL; PRIMARY MECHANISM; RADIATION RESPONSE; RADIATION-INDUCED DEGRADATION; SILICON-ON-INSULATORS; TOTAL IONIZING DOSE (TID);

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; IONIZING RADIATION; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; TUNNELING (EXCAVATION); WIND TUNNELS;

RADIATION EFFECTS;

EID: 69549137050     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2012709     Document Type: Conference Paper

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