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Volumn 106, Issue 8, 2009, Pages

Influence of ultrathin AlN interlayer on the microstructure and the electrical transport properties of Alx Ga1-x N/GaN heterostructures

(6) Song, J a Xu, F J a Miao, Z L a Wang, Y a Wang, X Q a Shen, B a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ELECTRICAL PROPERTY; ELECTRICAL TRANSPORT PROPERTIES; HETERO INTERFACES; HETEROSTRUCTURES; INTERFACE CHARGE; LOCAL STRAINS; MISMATCH STRAIN; NONUNIFORMITY; OPTIMUM THICKNESS; PIEZOELECTRIC POLARIZATION FIELDS; THREADING DISLOCATION; TRANSMISSION ELECTRON MICROSCOPY IMAGES; ULTRA-THIN;

ELECTRIC PROPERTIES; ELECTRON GAS; GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; MICROSTRUCTURE; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; TWO DIMENSIONAL ELECTRON GAS;

ALUMINUM;

EID: 70350714035 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3246866 Document Type: Article

Times cited : (9)

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