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Volumn 96, Issue 7, 2010, Pages

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

(6) Chikhaoui, W a Bluet, J M a Poisson, M A b Sarazin, N b Dua, C b Bru Chevallier, C a

a UNIVERSITÉ DE LYON (France)

b ALCATEL THALES III V LAB (France)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; CURRENT-VOLTAGE MEASUREMENTS; GATE LEAKAGES; METAL-ORGANIC; POOLE-FRENKEL EMISSION; REVERSE-BIAS; SIC SUBSTRATES; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; TRAP STATE;

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON MOBILITY; LEAKAGE CURRENTS; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77249133164 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3326079 Document Type: Article

Times cited : (85)

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