Fully transparent flexible transistors built on metal oxide nanowires

Frontiers of Optoelectronics in China

Volumn 3, Issue 3, 2010, Pages 217-227

  Chen, Di ^a   Xu, Jing ^a,b   Shen, Guozhen ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

field effect transistor (FET); metal oxide; nanowires; thin film transistor (TFT); transparent electronics

Indexed keywords

EID: 78650288981     PISSN: 16744128     EISSN: 16744594     Source Type: Journal    
DOI: 10.1007/s12200-010-0110-0     Document Type: Review

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