SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 6, 2010, Pages 1298-1303

Relaxation of misfit strain in silicon-germanium (Si1-xGe x) films during dry oxidation

(6) Yoo, Jung Ho a Kim, Sun Wook a Min, Byoung Gi a,b Sohn, Hyunchul a Ko, Dae Hong a Cho, Mann Ho a

a Yonsei University (South Korea)

b SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; OXIDATION; PILES; SILICON; SILICON COMPOUNDS; SILICON OXIDES; STRAIN CONTROL; STRAIN RELAXATION; SUBSTRATES;

DRY OXIDATION; GE FRACTION; MISFIT DISLOCATIONS; MISFIT STRAINS; OXIDATION TIME; PILE-UPS; SI SUBSTRATES; SILICON GERMANIUM; SILICON OXIDE LAYERS; SILICON SUBSTRATES; TUBE FURNACES; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

GERMANIUM;

EID: 78650101909 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3516014 Document Type: Article

Times cited : (6)

References (22)

1
- 0032202255
- SSTEET 0268-1242,. 10.1088/0268-1242/13/11/002
- C. K. Maiti, L. K. Bera, and S. Chattopadhyay, Semicond. Sci. Technol. SSTEET 0268-1242 13, 1225 (1998). 10.1088/0268-1242/13/11/002
- (1998) Semicond. Sci. Technol. , vol.13 , pp. 1225
- Maiti, C.K.¹ Bera, L.K.² Chattopadhyay, S.³

2
- 0026138240
- EDLEDZ 0741-3106,. 10.1109/55.75748
- D. K. Nayak, J. C. S. Woo, J. S. Park, K. Wang, and K. P. MacWilliams, IEEE Electron Device Lett. EDLEDZ 0741-3106 12, 154 (1991). 10.1109/55.75748
- (1991) IEEE Electron Device Lett. , vol.12 , pp. 154
- Nayak, D.K.¹ Woo, J.C.S.² Park, J.S.³ Wang, K.⁴ MacWilliams, K.P.⁵

3
- 0030270182
- IETDAI 0018-9383,. 10.1109/16.536817
- D. K. Nayak, K. Goto, A. Yutani, J. Murota, and Y. Shiraki, IEEE Trans. Electron Devices IETDAI 0018-9383 43, 1709 (1996). 10.1109/16.536817
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1709
- Nayak, D.K.¹ Goto, K.² Yutani, A.³ Murota, J.⁴ Shiraki, Y.⁵

4
- 0031343435
- SSELA5 0038-1101,. 10.1016/S0038-1101(97)00152-4
- C. K. Maiti, L. K. Bera, S. S. Dey, D. K. Nayak, and N. B. Chakrabarti, Solid-State Electron. SSELA5 0038-1101 41, 1863 (1997). 10.1016/S0038-1101(97) 00152-4
- (1997) Solid-State Electron. , vol.41 , pp. 1863
- Maiti, C.K.¹ Bera, L.K.² Dey, S.S.³ Nayak, D.K.⁴ Chakrabarti, N.B.⁵

5
- 36449008939
- APPLAB 0003-6951,. 10.1063/1.111367
- K. Ismail, J. O. Chu, and B. S. Meyerson, Appl. Phys. Lett. APPLAB 0003-6951 64, 3124 (1994). 10.1063/1.111367
- (1994) Appl. Phys. Lett. , vol.64 , pp. 3124
- Ismail, K.¹ Chu, J.O.² Meyerson, B.S.³

6
- 0000059047
- Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
- DOI 10.1063/1.121162, PII S0003695198012145
- M. T. Currie, S. B. Samavedam, T. A. Langdo, C. W. Leitz, and E. A. Fitzgerald, Appl. Phys. Lett. APPLAB 0003-6951 72, 1718 (1998). 10.1063/1.121162 (Pubitemid 128671439)
- (1998) Applied Physics Letters , vol.72 , Issue.14 , pp. 1718-1720
- Currie, M.T.¹ Samavedam, S.B.² Langdo, T.A.³ Leitz, C.W.⁴ Fitzgerald, E.A.⁵

7
- 0030109420
- EDLEDZ 0741-3106,. 10.1109/55.485188
- M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, and I. Adesida, IEEE Electron Device Lett. EDLEDZ 0741-3106 17, 124 (1996). 10.1109/55.485188
- (1996) IEEE Electron Device Lett. , vol.17 , pp. 124
- Arafa, M.¹ Fay, P.² Ismail, K.³ Chu, J.O.⁴ Meyerson, B.S.⁵ Adesida, I.⁶

8
- 0242498422
- APPLAB 0003-6951,. 10.1063/1.1622442
- S. Nakaharai, T. Tezuka, N. Sugiyama, Y. Moriyama, and S. -i. Takagi, Appl. Phys. Lett. APPLAB 0003-6951 83, 3516 (2003). 10.1063/1.1622442
- (2003) Appl. Phys. Lett. , vol.83 , pp. 3516
- Nakaharai, S.¹ Tezuka, T.² Sugiyama, N.³ Moriyama, Y.⁴ Takagi, S.-I.⁵

9
- 0043175190
- IETDAI 0018-9383,. 10.1109/TED.2003.813249
- T. Tezuka, N. Sugiyama, T. Mizuno, and S. Takagi, IEEE Trans. Electron Devices IETDAI 0018-9383 50, 1328 (2003). 10.1109/TED.2003.813249
- (2003) IEEE Trans. Electron Devices , vol.50 , pp. 1328
- Tezuka, T.¹ Sugiyama, N.² Mizuno, T.³ Takagi, S.⁴

10
- 33746215275
- x
- DOI 10.1063/1.2201690
- B. -G. Min, Y. H. Pae, K. S. Jun, D. -H. Ko, H. Kim, M. -H. Cho, and T. -W. Lee, J. Appl. Phys. JAPIAU 0021-8979 100, 016102 (2006). 10.1063/1.2201690 (Pubitemid 44090909)
- (2006) Journal of Applied Physics , vol.100 , Issue.1 , pp. 016102
- Min, B.-G.¹ Pae, Y.H.² Jun, K.S.³ Ko, D.-H.⁴ Kim, H.⁵ Cho, M.-H.⁶ Lee, T.-W.⁷

11
- 0013242121
- JAPIAU 0021-8979,. 10.1063/1.342945
- F. K. LeGoues, R. Rosenberg, T. Nguyen, F. Himpsel, and B. S. Meyerson, J. Appl. Phys. JAPIAU 0021-8979 65, 1724 (1989). 10.1063/1.342945
- (1989) J. Appl. Phys. , vol.65 , pp. 1724
- Legoues, F.K.¹ Rosenberg, R.² Nguyen, T.³ Himpsel, F.⁴ Meyerson, B.S.⁵

12
- 0001946668
- APPLAB 0003-6951,. 10.1063/1.102653
- D. Nayak, K. Kamjoo, J. C. S. Woo, J. S. Park, and K. L. Wang, Appl. Phys. Lett. APPLAB 0003-6951 56, 66 (1990). 10.1063/1.102653
- (1990) Appl. Phys. Lett. , vol.56 , pp. 66
- Nayak, D.¹ Kamjoo, K.² Woo, J.C.S.³ Park, J.S.⁴ Wang, K.L.⁵

13
- 0000973048
- APPLAB 0003-6951,. 10.1063/1.103694
- D. K. Nayak, K. Kamjoo, J. S. Park, J. C. S. Woo, and K. L. Wang, Appl. Phys. Lett. APPLAB 0003-6951 57, 369 (1990). 10.1063/1.103694
- (1990) Appl. Phys. Lett. , vol.57 , pp. 369
- Nayak, D.K.¹ Kamjoo, K.² Park, J.S.³ Woo, J.C.S.⁴ Wang, K.L.⁵

14
- 0012264612
- APPLAB 0003-6951,. 10.1063/1.100905
- F. K. LeGoues, R. Rosenberg, and B. S. Meyerson, Appl. Phys. Lett. APPLAB 0003-6951 54, 644 (1989). 10.1063/1.100905
- (1989) Appl. Phys. Lett. , vol.54 , pp. 644
- Legoues, F.K.¹ Rosenberg, R.² Meyerson, B.S.³

15
- 74249113646
- THSFAP 0040-6090,. 10.1016/j.tsf.2009.07.145
- B. -G. Min, J. -H. Yoo, H. -C. Sohn, D. -H. Cho, K. -B. Chung, and T. -W. Lee, Thin Solid Films THSFAP 0040-6090 518, 2065 (2010). 10.1016/j.tsf.2009.07. 145
- (2010) Thin Solid Films , vol.518 , pp. 2065
- Min, B.-G.¹ Yoo, J.-H.² Sohn, H.-C.³ Cho, D.-H.⁴ Chung, K.-B.⁵ Lee, T.-W.⁶

16
- 76049120549
- THSFAP 0040-6090,. 10.1016/j.tsf.2009.09.146
- J. H. Jang, S. Y. Son, W. Lim, M. S. Phen, K. Siebein, and V. Craciun, Thin Solid Films THSFAP 0040-6090 518, 2462 (2010). 10.1016/j.tsf.2009.09.146
- (2010) Thin Solid Films , vol.518 , pp. 2462
- Jang, J.H.¹ Son, S.Y.² Lim, W.³ Phen, M.S.⁴ Siebein, K.⁵ Craciun, V.⁶

17
- 0000069616
- JAPIAU 0021-8979,. 10.1063/1.366730
- J. Huang, Z. Ye, H. Lu, and D. Que, J. Appl. Phys. JAPIAU 0021-8979 83, 171 (1998). 10.1063/1.366730
- (1998) J. Appl. Phys. , vol.83 , pp. 171
- Huang, J.¹ Ye, Z.² Lu, H.³ Que, D.⁴

18
- 12044253285
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.72.2585
- N. E. B. Cowern, P. C. Zalm, P. van der Sluis, D. J. Gravesteijn, and W. B. de Boer, Phys. Rev. Lett. PRLTAO 0031-9007 72, 2585 (1994). 10.1103/PhysRevLett.72.2585
- (1994) Phys. Rev. Lett. , vol.72 , pp. 2585
- Cowern, N.E.B.¹ Zalm, P.C.² Van Der Sluis, P.³ Gravesteijn, D.J.⁴ De Boer, W.B.⁵

19
- 33746652225
- SiGe amorphization during Ge condensation in silicon germanium on insulator
- DOI 10.1063/1.2222341
- S. Balakumar, G. Q. Lo, C. H. Tung, R. Kumar, N. Balasubramanian, D. L. Kwong, C. S. Ong, and M. F. Li, Appl. Phys. Lett. APPLAB 0003-6951 89, 042115 (2006). 10.1063/1.2222341 (Pubitemid 44147568)
- (2006) Applied Physics Letters , vol.89 , Issue.4 , pp. 042115
- Balakumar, S.¹ Lo, G.Q.² Tung, C.H.³ Kumar, R.⁴ Balasubramanian, N.⁵ Kwong, D.L.⁶ Ong, C.S.⁷ Li, M.F.⁸

20
- 33846428385
- SiGeO layer formation mechanism at the SiGe/oxide interfaces during Ge condensation
- DOI 10.1063/1.2432252
- S. Balakumar, S. Peng, K. M. Hoe, A. Agarwal, G. Q. Lo, R. Kumar, N. Balasubramanian, D. L. Kwong, and S. Tripathy, Appl. Phys. Lett. APPLAB 0003-6951 90, 032111 (2007). 10.1063/1.2432252 (Pubitemid 46146361)
- (2007) Applied Physics Letters , vol.90 , Issue.3 , pp. 032111
- Balakumar, S.¹ Peng, S.² Hoe, K.M.³ Agarwal, A.⁴ Lo, G.Q.⁵ Kumar, R.⁶ Balasubramanian, N.⁷ Kwong, D.L.⁸ Tripathy, S.⁹

21
- 33847157265
- Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique
- DOI 10.1063/1.2470722
- B. Vincent, J. F. Damlencourt, V. Delaye, R. Gassilloud, L. Clavelier, and Y. Morand, Appl. Phys. Lett. APPLAB 0003-6951 90, 074101 (2007). 10.1063/1.2470722 (Pubitemid 46280743)
- (2007) Applied Physics Letters , vol.90 , Issue.7 , pp. 074101
- Vincent, B.¹ Damlencourt, J.-F.² Delaye, V.³ Gassilloud, R.⁴ Clavelier, L.⁵ Morand, Y.⁶

22
- 27844582118
- Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure
- DOI 10.1016/j.mseb.2005.08.071, PII S0921510705004563
- Z. Di, M. Zhang, W. Liu, M. Zhua, C. Lin, and P. K. Chu, Mater. Sci. Eng., B MSBTEK 0921-5107 124-125, 153 (2005). 10.1016/j.mseb.2005.08.071 (Pubitemid 41661009)
- (2005) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.124-125 , Issue.SUPPL. , pp. 153-157
- Di, Z.¹ Zhang, M.² Liu, W.³ Zhu, M.⁴ Lin, C.⁵ Chu, P.K.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.