Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 153-157

  Di, Zengfeng ^a,b   Zhang, Miao ^a   Liu, Weili ^a   Zhu, Ming ^a,b   Lin, Chenglu ^a   Chu, Paul K ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Diffusion; Oxidation; SiGe on insulator

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); GERMANIUM; OXIDATION; RAMAN SPECTROSCOPY; TEMPERATURE DISTRIBUTION;

GE FRACTION; RAMAN MEASUREMENTS; SANDWICHED STRUCTURE; SIGE-ON-INSULATOR;

SILICON ON INSULATOR TECHNOLOGY;

EID: 27844582118     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.071     Document Type: Conference Paper

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