Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

Thin Solid Films

Volumn 518, Issue 8, 2010, Pages 2065-2069

  Min, B G ^a   Yoo, J H ^a   Sohn, H C ^a   Ko, D H ^a   Cho, M H ^a   Chung, K B ^b   Lee, T W ^c  

^a Yonsei University   (South Korea)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c Jusung Engineering Company Limited   (South Korea)

Author keywords

Ge pile up layer; Medium energy ion scattering; Oxidation; Relaxation; Si1 xGex; Strain

Indexed keywords

DRY OXIDATION; MEDIUM ENERGY ION SCATTERING; OXIDATION TIME; PILE-UPS; RATE OF RELAXATION; SELECTIVE OXIDATION;

IONS; OXIDATION; PILES; PLASMA INTERACTIONS; SCATTERING; SILICON;

GERMANIUM;

EID: 74249113646     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.07.145     Document Type: Article

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