Formation of a Ge-rich layer during the oxidation of strained Si 1-xGex

Journal of Applied Physics

Volumn 100, Issue 1, 2006, Pages

  Min, B G ^a   Pae, Y H ^a   Jun, K S ^a   Ko, D H ^a   Kim, H ^b   Cho, M H ^c   Lee, T W ^d  

^a Yonsei University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

^d Jusung Engineering Company Limited   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; OXIDATION; PHASE TRANSITIONS; RELAXATION PROCESSES; SATURATION (MATERIALS COMPOSITION); SILICON COMPOUNDS; THERMAL EFFECTS;

DIFFUSIVITY; OXIDATION TEMPERATURE;

GERMANIUM;

EID: 33746215275     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2201690     Document Type: Article

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