Efficient relaxation of strained-SiGe layers induced by thermal oxidation

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2462-2465

  Jang, J H ^a   Son, S Y ^a   Lim, W ^a   Phen, M S ^a   Siebein, K ^a   Craciun, V ^a,b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b NATIONAL INSTITUTE FOR LASER   (Romania)

Author keywords

relaxation: oxidation; SiGe

Indexed keywords

ACCUMULATION LAYERS; GE ATOM; GE DIFFUSION; HIGH TEMPERATURE; HIGHER TEMPERATURES; LOW-TEMPERATURE OXIDATION; OXIDATION TEMPERATURE; OXIDE LAYER; RELAXATION: OXIDATION; STRAINED SIGE; STRAINED-SI; THERMAL OXIDATION; VIRTUAL SUBSTRATES;

OXIDATION; SILICON; SILICON ALLOYS;

GERMANIUM;

EID: 76049120549     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.146     Document Type: Article

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