SiGeO layer formation mechanism at the SiGe/oxide interfaces during Ge condensation

Applied Physics Letters

Volumn 90, Issue 3, 2007, Pages

  Balakumar, S ^a   Peng, Suo ^a   Hoe, K M ^a   Agarwal, A ^a   Lo, G Q ^a   Kumar, R ^a   Balasubramanian, N ^a   Kwong, D L ^a   Tripathy, S ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONDENSATION; ELECTRIC INSULATORS; ETCHING; GERMANIUM; INTERFACES (MATERIALS); OXIDATION; SILICON COMPOUNDS;

ANNEALING CYCLES; LAYER FORMATION MECHANISMS; OXIDE LAYERS;

CRYSTALLINE MATERIALS;

EID: 33846428385     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2432252     Document Type: Article

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