Atomic-order thermal nitridation of silicon at low temperatures

Journal of the Electrochemical Society

Volumn 145, Issue 12, 1998, Pages 4252-4256

  Watanabe, Takeshi ^a   Ichikawa, Akihiro ^a,b   Sakuraba, Mascio ^a   Matsuura, Takashi ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; LOW TEMPERATURE EFFECTS; NITRIDING; ORDER DISORDER TRANSITIONS; SEMICONDUCTING FILMS;

THERMAL NITRIDATION; ULTRACLEAN LOW PRESSURE HOT-WALL REACTOR SYSTEM;

SEMICONDUCTING SILICON;

EID: 0032294176     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838946     Document Type: Article

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