Base doping and dopant profile control of SiGe npn and pnp HBTs

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6013-6016

  Tillack, Bernd ^a   Heinemann, Bernd ^a   Knoll, Dieter ^a   Rücker, Holger ^a   Yamamoto, Yuji ^a  

^a IHP   (Germany)

Author keywords

Atomic layer doping; Base doping; HBT; SiGe

Indexed keywords

ATOMS; BISMUTH ALLOYS; DOPING (ADDITIVES); HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS;

ATOMIC-LAYER DOPING; DEPOSITION TEMPERATURES; DEVICE PROCESSING; DOPING CONCENTRATION; ELECTRICALLY ACTIVES; HETEROJUNCTION BIPOLAR TRANSISTOR (HBTS); PROCESSING APPROACH; SIGE;

SI-GE ALLOYS;

EID: 45049085016     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.124     Document Type: Article

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