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Surface and Interface Analysis

Volumn 34, Issue 1, 2002, Pages 423-431

Atomically controlled processing for group IV semiconductors

(3) Murota, Junichi a Matsuura, Takashi a Sakuraba, Masao a

a TOHOKU UNIVERSITY (Japan)

Author keywords

Atomically controlled processing; CVD; Etching; Group IV semiconductor; Langmuir; Self limited reaction

Indexed keywords

ADSORPTION; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; HYDRIDES; MONOLAYERS; RATE CONSTANTS; SEMICONDUCTING SILICON COMPOUNDS;

ATOMICALLY CONTROLLED PROCESSING; HENRY LAW; LANGMUIR-TYPE SURFACE ADSORPTION; ROLE-SHARE METHOD; THERMAL ADSORPTION;

SURFACES;

EID: 0036694287 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/sia.1331 Document Type: Conference Paper

Times cited : (49)

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