P doping control during SiGe:C epitaxy

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 288-291

  Yamamoto, Yuji ^a   Tillack, Bernd ^a   Köpke, Klaus ^a   Kurps, Rainer ^a  

^a IHP   (Germany)

Author keywords

Epitaxy; P autodoping; Si; SiGe

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIFFUSION COATINGS; DOPING (ADDITIVES); DRY ETCHING; EPITAXIAL GROWTH;

CAP LAYER DEPOSITION; P AUTODOPING; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION (RPCVD); SIGE;

SEMICONDUCTING SILICON;

EID: 33646096751     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.06.104     Document Type: Article

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