High performance SiGe:C HBTs using atomic layer base doping

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 55-58

  Tillack, Bernd ^a   Yamamoto, Yuji ^a   Knoll, Dieter ^a   Heinemann, Bernd ^a   Schley, Peter ^a   Senapati, Biswanath ^a   Krüger, Dietmar ^a  

^a IHP   (Germany)

Author keywords

Atomic layer doping; BiCMOS; CVD; Epitaxy; HBT; SiGe:C

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; ERROR ANALYSIS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; PARTIAL PRESSURE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DOPING; BICMOS; SIGEC;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 1142304541     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.028     Document Type: Conference Paper

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