Selective polycrystalline Si and SiGe deposition on epitaxial Si induced by B-atotnic layer doping

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 503-510

  Yamamoto, Yuji ^a   Köpkea, Klaus ^a   Fursenko, Oksana ^a   Weidner, Günter ^a   Murotab, Junichi ^b   Tillack, Bernd ^a  

^a IHP   (Germany)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC LAYER DEPOSITION; DOPING (ADDITIVES); GERMANIUM COMPOUNDS; POLYSILICON;

ATOMIC-LAYER DOPING; B DIFFUSION; DOPING CONCENTRATION; EFFECTIVE ACTIVATION ENERGY; EPITAXIAL SI; POLYCRYSTALLINE GROWTH; POLYCRYSTALLINE-SI; SI SUBSTRATES;

SI-GE ALLOYS;

EID: 63149119072     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986807     Document Type: Conference Paper

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