Atomic layer doping of SiGe - fundamentals and device applications

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 189-194

  Tillack, B ^a   Heinemann, B ^a   Knoll, D ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; CHEMICAL VAPOR DEPOSITION; DISSOCIATION; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLAYERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

ATOMIC LAYER DOPING; DISSOCIATIVE ADSORPTION;

SEMICONDUCTING FILMS;

EID: 0034226337     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00804-X     Document Type: Article

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