A 2 bit nonvolatile memory device with a transistor switch function accomplished with edge-FN tunneling operation

Electrochemical and Solid-State Letters

Volumn 13, Issue 5, 2010, Pages

  Jian, Fu Yen ^a   Chang, Ting Chang ^a,b   Chu, Ann Kuo ^a   Chen, Shih Ching ^a   Chen, Te Chih ^a   Hsu, Yung En ^a   Tseng, Hsueh Chih ^a   Lin, Chia Sheng ^a   Young, Tai Fa ^a   Yang, Ya Liang ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

2-BIT NONVOLATILE MEMORY DEVICE; F-N TUNNELING; FOWLER-NORDHEIM TUNNELING; GATE-INDUCED DRAIN LEAKAGE; HOLE INJECTION; MEMORY OPERATIONS; NON-VOLATILE MEMORIES; SILICON OXIDE NITRIDE OXIDE SILICONS; THRESHOLD VOLTAGE SHIFTS; TRANSISTOR SWITCH;

DRAIN CURRENT; ELECTRIC CURRENTS; LEAKAGE CURRENTS; NITRIDES; NONVOLATILE STORAGE; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; WIND TUNNELS;

TUNNELING (EXCAVATION);

EID: 77949709909     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3333405     Document Type: Article

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