Interface states in cycled hot electron injection programhot hole erase silicon-oxide-nitride-oxide-silicon memories

Applied Physics Letters

Volumn 85, Issue 25, 2004, Pages 6266-6268

  Daniel, Ramiz ^a,b   Shaham Diamand, Yossi ^b   Roizin, Yakov ^a  

^a TOWER SEMICONDUCTOR LTD   (Israel)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; DEGRADATION; DIELECTRIC MATERIALS; FLASH MEMORY; TRANSISTORS;

CHARGE PUMPING; DRAIN VOLTAGE; HOT ELECTRON INJECTION; METALLURGICAL JUNCTIONS;

SEMICONDUCTING SILICON;

EID: 20444500551     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1839289     Document Type: Article

References (8)

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