The study of hot-carrier stress on poly-Si TFT employing C-V measurement

IEEE Transactions on Electron Devices

Volumn 52, Issue 4, 2005, Pages 512-517

  Moon, Kook Chul ^a   Lee, Jae Hoon ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

Capacitance voltage (C V); Hot carrier; Poly Si; Reliability; Thin film transistor (TFTs)

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRON TRAPS; GRAIN BOUNDARIES; HOT CARRIERS; POLYSILICON; VOLTAGE MEASUREMENT;

HOT CARRIER STRESS; TRAP STATES;

THIN FILM TRANSISTORS;

EID: 17444363758     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.844740     Document Type: Article

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