Degradation mechanism of Poly-Si TFTs dynamically operated in OFF region

IEEE Electron Device Letters

Volumn 30, Issue 3, 2009, Pages 231-233

  Tai, Ya Hsiang ^a   Huang, Shih Che ^a   Chen, Po Ting ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

AC stress; Dynamic stress; Poly Si thin film transistors (TFTs); Reliability

Indexed keywords

CIRCUIT THEORY; DEGRADATION; DROPS; POLYSILICON; RELIABILITY; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; VOLTAGE CONTROL;

AC STRESS; CIRCUIT MODELS; DEGRADATION MECHANISMS; DYNAMIC STRESS; EQUIVALENT CIRCUIT MODELS; GATE DYNAMICS; GATE VOLTAGES; IDENTICAL PROCESS; POLY-SI TFT; POLY-SI TFTS; POLY-SI THIN-FILM TRANSISTORS (TFTS); RELIABILITY BEHAVIORS; SOURCE AND DRAINS; UNDER GATES; VOLTAGE DROPS;

THIN FILM TRANSISTORS;

EID: 62649151339     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2010784     Document Type: Article

References (7)

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