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Current Applied Physics

Volumn 10, Issue 1 SUPPL. 1, 2010, Pages

5-bit/cell Characteristics using mixed program/erase mechanism in recessed channel non-volatile memory cells

(4) Han, Kyoung Rok a Jeong, Min Kyu b Cho, Ilwhan c Lee, Jong Ho b

a Kyungpook National University (South Korea)

b Seoul National University (South Korea)

c Myong Ji University (South Korea)

Author keywords

5 bit cell; CHEI; FN; Gate induced drain leakage; Memory; Non volatile; Recessed channel

Indexed keywords

CHANNEL HOT ELECTRON INJECTION; CHARGE STORAGE; CONTROL GATES; DEVICE CHARACTERISTICS; DEVICE STRUCTURES; F-N TUNNELING; GATE-INDUCED DRAIN LEAKAGE; MEMORY CELL; MEMORY DENSITY; NITRIDE LAYERS; NON-VOLATILE; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY TECHNOLOGY; PROGRAM/ERASE; RECESSED CHANNELS; SOURCE AND DRAINS; STORAGE NODES; VERTICAL SURFACE;

COMPUTER CRIME; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CURRENTS; FLASH MEMORY; NITRIDES; SEMICONDUCTOR STORAGE;

DRAIN CURRENT;

EID: 77649238198 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2009.12.001 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.