Electrical degradation of n-channel poly-Si TFT under AC stress

Electrochemical and Solid-State Letters

Volumn 8, Issue 9, 2005, Pages

  Chen, C W ^a   Chang, T C ^a,d   Liu, P T ^c   Lu, H Y ^c   Tsai, T M ^a   Weng, C F ^b   Hu, C W ^b   Tseng, T Y ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; POLYSILICON; STRESS ANALYSIS;

DYNAMIC VOLTAGE STRESS; ELECTRICAL ANALYSIS; ELECTRICAL DEGRADATION; STRESS DURATION;

THIN FILM TRANSISTORS;

EID: 25144491179     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1960173     Document Type: Article

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