NROM™ - A new technology for non-volatile memory products

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1757-1763

  Bloom, Ilan ^a   Pavan, Paolo ^a,b   Eitan, Boaz ^a  

^a Saifun Semiconductors Ltd   (Israel)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

EEPROM; Embedded non volatile memories; Flash; Multi bit per cell; Non volatile memory; NROM ; Two bit per cell

Indexed keywords

ELECTRON TRAPS; EMBEDDED SYSTEMS; FLASH MEMORY; MOSFET DEVICES; PRODUCT DEVELOPMENT; SEMICONDUCTOR JUNCTIONS;

EMBEDDED MEMORIES;

NONVOLATILE STORAGE;

EID: 0036839165     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00145-4     Document Type: Conference Paper

References (3)

1. Eitan B. U.S. Patent No. 5,768,192. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping, 16 June, 1998.
2. Eitan B., Pavan P., Bloom I., Aloni E., Frommer A., Finzi D. Can NROM™, a 2-bit trapping storage cell, give a real challenge to floating gate cells? Proc. SSDM 99, Tokyo, Japan, September 1999. p. 522-24.
3. Eitan B., Pavan P., Bloom I., Aloni E., Frommer A., Finzi D. NROM: a novel localized trapping, 2-bit nonvolatile memory cell. IEEE Electron Dev Lett. EDL-21(11):2000;543-545.