Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires

Semiconductor Science and Technology

Volumn 25, Issue 9, 2010, Pages

  Cerofolini, G F ^a   Ferri, M ^b   Romano, E ^a   Suriano, F ^b   Veronese, G P ^b   Solmi, S ^b   Narducci, D ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED LITHOGRAPHY; BIT DENSITY; CIRCUIT TECHNOLOGY; CONVENTIONAL CIRCUITS; COST-INCREASES; CROSS-BAR STRUCTURES; ELECTRICAL PROPERTY; INTERCONNECTION COMPLEXITY; MANUFACTURING FACILITY; POINT DENSITY; POLY-SI; SILICON NANOWIRES; TERASCALE INTEGRATION; TRANSISTOR DENSITY;

ELECTRIC PROPERTIES; NANOWIRES; POLYSILICON;

ELECTRIC WIRE;

EID: 78649389989     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/9/095011     Document Type: Article

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