Design of GeSiGe quantum-confined stark effect electroabsorption heterostructures for CMOS compatible photonics

Journal of Lightwave Technology

Volumn 28, Issue 22, 2010, Pages 3273-3281

  Lever, Leon ^a   Ikonić, Zoran ^a   Valavanis, Alex ^a   Cooper, Jonathan D ^a   Kelsall, Robert W ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

Modulation; Quantum well devices; Quantum confined Stark effect

Indexed keywords

1550 NM; ANALYSIS AND DESIGN; CMOS COMPATIBLE; DESIGN STRUCTURE; EFFECTIVE MASS; ELECTRO-ABSORPTION; HETEROSTRUCTURES; MODELLING TOOLS; MULTIPLE QUANTUM WELLS; PREDICTIVE CAPABILITIES; QUANTUM CONFINED STARK EFFECT; QUANTUM WELL DEVICE; SIMULATION TOOL;

ABSORPTION; CRYSTALS; DESIGN; ELECTROABSORPTION MODULATORS; LIGHT ABSORPTION; MODULATION; MODULATORS; SPECTROSCOPY; STARK EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78649378380     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2010.2081345     Document Type: Article

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