C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1V swing

Electronics Letters

Volumn 44, Issue 1, 2008, Pages 49-50

  Roth, J E ^a   Fidaner, O ^a   Edwards, E H ^a   Schaevitz, R K ^a   Kuo, Y H ^b   Helman, N C ^c   Kamins, T I ^a   Harris, J S ^a   Miller, D A B ^a  

^a Stanford University   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROABSORPTION MODULATORS; FABRY-PEROT INTERFEROMETERS; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; STARK EFFECT; SUBSTRATES;

CONTRAST RATIO; OXIDE LAYERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 37249072357     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20082979     Document Type: Article

References (5)

1. Soref, R., and Bennett, B.: ' Electro optical effects in silicon ', IEEE J. Quantum Electron., 1987, 23, p. 123-129 10.1109/JQE.1987.1073206 0018-9197
2. Kuo, Y.-H., Lee, Y.-K., Ge, Y., Ren, S., Roth, J.E., Kamins, T.I., Miller, D.A.B., and Harris, J.S.: ' Strong quantum-confined Stark effect in germanium quantum-well structures on silicon ', Nature, 2005, 437, p. 1334-1336 10.1038/nature04204 0028-0836
3. Kuo, Y.-H., Lee, Y.K., Ge, Y., Ren, S., Roth, J.E., Kamins, T.I., Miller, D.A.B., and Harris, J.S.: ' Quantum-confined stark effect in Ge/SiGe quantum wells on Si for optical modulators ', IEEE J. Sel. Top. Quantum Electron., 2006, 12, p. 1503-1513 10.1109/JSTQE.2006.883146 1077-260X
4. Roth, J.E., Fidaner, O., Schaevitz, R.K., Kuo, Y.-H., Kamins, T.I., Harris, J.S., and Miller, D.A.B.: ' Optical modulator on silicon employing germanium quantum wells ', Opt. Express, 2007, 15, p. 5851-5859 1094-4087
5. Zhu, S., Yu, A.W., Hawley, D., and Roy, R.: ' Frustrated total internal reflection: a demonstration and review ', Am. J. Phys., 1986, 54, (7), p. 601-606 10.1119/1.14514 0002-9505