The effect of threading disclocations on optical absorption and electron scattering in strongly mismatched heteroepitaxial III-V compound semiconductors on silicon

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13195-13201

  Peiner, Erwin ^a   Guttzeit, Andreas ^a   Wehmann, Hergo Heiurich ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; ELECTRONS; LIGHT ABSORPTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

HETEROEPITAXIAL COMPOUND SEMICONDUCTORS; THREADING DISLOCATIONS;

SEMICONDUCTING SILICON;

EID: 0037122178     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/368     Document Type: Article

References (14)

1. Taylor P J, Jesser W A, Benson J D, Martinka M, Dinan J H, Bradshaw J, Lara-Taysing M, Leavitt R P, Simonis G, Chang W, Clark W W III and Bertness K. A. 2001 Optoelectronic device performance on reduced threading dislocation density GaAs/Si J. Appl. Phys. 89 4365-75
2. Fehly D, Schlachetzki A, Bakin A S, Guttzeit A and Wehmann H-H 2001 Monolithic InGaAsP optoelectronic devices with silicon electronics IEEE J. Quantum Electron. 37 1246-52
3. Walters R J, Romero M J, Araújo D, Garcia R, Messenger S R and Summers G. P. 1999 Detailed defect study in proton irradiated InP/Si solar cells J. Appl. Phys. 86 3584-9
4. Bartels A, Peiner E and Schlachetzki A 1995 Substrate effect on the transport properties of semiconducting films J. Appl. Phys. 77 1621-6
5. 0.47As on exactly (001)-oriented Si grown by metal-organic vapour-phase epitaxy J. Cryst. Growth 172 44-52
6. Dodson B. W. 1991 Stress accommodation in large-mismatch systems J. Cryst. Growth 111 376-82
7. Sugo M, Takanashi Y, Al-jassim M M and Yamaguchi M 1990 Heteroepitaxial growth and characterization of InP on Si substrates J. Appl. Phys. 68 540-7
8. Tachikawa M, Yamada T, Sasaki T, Mori H and Kadota Y. 1995 Laser-diode-quality InP/Si grown by hydride vapour phase epitaxy Japan. J. Appl. Phys. 34 L657-9
9. Yamada T, Tachikawa M, Sasaki T, Mori H and Kadota Y 1997 7000 h continuous wave operation of multiple quantum well laser on Si at 50 °C Appl. Phys. Lett. 70 1614-15
10. Kuz'menko R V, Gansha A V, Bochurova O V, Domashevskaya É P, Schreiber J, Hildebrandt S, Mo S, Peiner E and Schlachetzki A 2000 Temperature dependence of residual stress in epitaxial GaAs/Si(100) films determined from photoreflectance spectroscopy data Semiconductors 34 73-80
11. Iber H, Peiner E and Schlachetzki A 1996 The effect of dislocations on the optical absorption of heteroepitaxial InP and GaAs on Si J. Appl. Phys. 79 9273-7
12. Bartels A, Peiner E and Schlachetzki A 1995 The effect of dislocations on the transport properties of InP/Si J. Appl. Phys. 78 6141-6
13. Alexander H and Teichler H 1996 Dislocations in materials science and technology Electronic Structure and Properties of Semiconductors vol 4, ed R W Cahn,P Haasen, E J Kramer and W Schröter (Weinheim: VCH) pp 249-319
14. Masut R, Penchina C M and Farvacque J L 1982 Occupation statistics of dislocation deep levels in III-V compounds J. Appl. Phys. 53 4964-9