Monolithic integration of multiple-quantum-well lasers and modulators for high-speed transmission

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 2, Issue 2, 1996, Pages 326-335

  Ramdane, A ^a,b,c,d,e   Devaux, F ^a,f,g,h,i   Souli, N ^a   Delprat, D ^a,f   Ougazzaden, A ^a,j  

^a ORANGE LABS   (France)

^b Benyoucef Benkhedda

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d CNRS   (Algeria)

^e CNRS   (France)

^f FRANCE TELECOM CNET Res Laboratory ^*

^g UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^h UNIVERSITÉ PARIS SACLAY   (France)

ⁱ UNIVERSITY OF TEXAS   (United States)

^j UNIVERSITÉ PARIS DESCARTES   (France)

more..

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; ELECTRIC FIELD EFFECTS; ELECTROMAGNETIC DISPERSION; LIGHT ABSORPTION; LIGHT MODULATION; LIGHT MODULATORS; OPTICAL COMMUNICATION; QUANTUM WELL LASERS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES;

CHROMATIC DISPERSION LIMIT; ELECTROABSORPTION MODULATORS; HIGH SPEED TRANSMISSION; MONOLITHIC INTEGRATION; MULTIPLE QUANTUM WELL LASERS; NON RETURN TO ZERO TRANSMISSION;

INTEGRATED OPTOELECTRONICS;

EID: 0030156722     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.577388     Document Type: Article

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