Eigenstates and absorption spectra of interdiffused AlGaAs-GaAs multiple-quantum-well structures

IEEE Journal of Quantum Electronics

Volumn 32, Issue 8, 1996, Pages 1399-1415

  Li, E Herbert ^{b,c,d,e,f,g,h,i}   Weiss, Bernard L ^a,c   Chan, Kwok Sum ^a,d  

^a IEEE

^b UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^e Kirsten Aeronautical Laboratory   (United States)

^f KK Engineering Company   (Hong Kong)

^g Micro Systems   (Hong Kong)

^h Optoelectronics Group

ⁱ SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EIGENVALUES AND EIGENFUNCTIONS; ENERGY GAP; LIGHT ABSORPTION; LIGHT POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

COUPLED WAVEFUNCTIONS; INTERWELL COUPLED EIGENSTATES; POLARIZED ABSORPTION COEFFICIENTS; QUANTUM WELL INTERDIFFUSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030216767     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.511553     Document Type: Article

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