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Applied Physics Letters

Volumn 97, Issue 18, 2010, Pages

Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

(4) Yan, Qimin a Rinke, Patrick a,b Scheffler, Matthias a,b Van De Walle, Chris G a

a University of California (United States)

b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRAIN; DEFORMATION POTENTIAL; EFFECT OF STRAIN; GAN SUBSTRATE; INGAN/GAN QUANTUM WELL; POLARIZATION SWITCHING; SEMIPOLAR; STRAIN DEFORMATION; STRAINED STRUCTURE;

DEFORMATION; DENSITY FUNCTIONAL THEORY; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTICAL SWITCHES; POLARIZATION;

SHEAR STRAIN;

EID: 78649280664 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3507289 Document Type: Article

Times cited : (36)

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