Dislocation imaging for electronics application crystal selection

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 12, 2007, Pages 4298-4304

  Secroun, Aurélia ^a   Brinza, Ovidiu ^a   Tardieu, André ^a   Achard, Jocelyn ^a   Silva, François ^a   Bonnin, Xavier ^a   De Corte, Katrien ^b   Anthonis, Ans ^b   Newton, Mark E ^c   Ristein, Jürgen ^d   Geithner, Peter ^d   Gicquel, Alix ^a  

^a UNIVERSITÉ PARIS 13   (France)

^b HRD Antwerp NV   (Belgium)

^c UNIVERSITY OF WARWICK   (United Kingdom)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION IMAGING; HIGH POWER ELECTRONICS; POWER SWITCHING;

DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; ENERGY GAP; NITROGEN;

CRYSTAL STRUCTURE;

EID: 38049110886     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200776331     Document Type: Conference Paper

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