Device scaling of pseudo-vertical diamond power Schottky barrier diodes

Diamond and Related Materials

Volumn 18, Issue 9, 2009, Pages 1196-1199

  Umezawa, Hitoshi ^a   Ikeda, Kazuhiro ^a   Tatsumi, Natsuo ^b   Ramanujam, Kumaresan ^a   Shikata, Shin ichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Defect; Device scaling; Diamond; Operation limit; Schottky barrier diode

Indexed keywords

CVD DIAMOND; DENSITY OF DISLOCATION; DEVICE SCALING; DEVICE SIZES; DIAMOND POWER; DOPING CONCENTRATION; HIGH-POWER DEVICE APPLICATIONS; OPERATION LIMIT; OPERATION LIMITS; PARASITIC RESISTANCES; REVERSE BIAS; SINGLE CRYSTAL DIAMOND; SPECIFIC-ON-RESISTANCE;

CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; DIAMONDS; DIODES; DISLOCATIONS (CRYSTALS); LEAKAGE (FLUID); SEMICONDUCTOR DIODES; SINGLE CRYSTALS;

SCHOTTKY BARRIER DIODES;

EID: 67649668909     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.04.013     Document Type: Article

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