Optical and electronic properties of heavily boron-doped homo-epitaxial diamond

Physica Status Solidi (A) Applied Research

Volumn 199, Issue 1, 2003, Pages 9-18

  Bustarret, E ^a   Gheeraert, E ^a   Watanabe, K ^b  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC INSULATORS; ELLIPSOMETRY; EPITAXIAL GROWTH; HALL EFFECT; PHONONS; POLARIZATION;

IMPURITY BANDS;

DIAMONDS;

EID: 0141921775     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303819     Document Type: Conference Paper

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