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Volumn 313, Issue 1, 2010, Pages 1-7

Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes

Author keywords

A1. Crystal morphology; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting IIIV materials; B3. Light emitting diodes

Indexed keywords

A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; ATOMICALLY SMOOTH SURFACE; B1. NITRIDES; CARRIER GAS; CHOICE OF CARRIER; CRYSTAL MORPHOLOGIES; FACETED SURFACES; GAN SUBSTRATE; GROWTH OF GAN; HIGH DENSITY; INGAN/GAN; M-PLANE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MISORIENTATION ANGLE; MOLE FRACTION; OUTPUT POWER; PEAK WAVELENGTH; QUANTUM WELL; SEMI CONDUCTING III-V MATERIALS; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE MISORIENTATION;

EID: 78549285580     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.08.060     Document Type: Article
Times cited : (34)

References (32)
  • 32
    • 78549293633 scopus 로고    scopus 로고
    • personal communication
    • M. Iza, personal communication.
    • Iza, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.