Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 615-620

  Rudra, Alok ^a   Pelucchi, Emanuele ^a   Oberli, Daniel Y ^a   Moret, Nicolas ^a   Dwir, Benjamin ^a   Kapon, Eli ^a  

^a EPFL   (Switzerland)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; Al. Crystal morphology; Al. Interface; B2. Semiconducting III V materials

Indexed keywords

CRYSTALLOGRAPHY; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; VISION;

CRYSTAL MORPHOLOGY; GAAS SUBSTRATES; INTERFACES; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 9944246994     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.047     Document Type: Conference Paper

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