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Volumn 5, Issue 6, 2008, Pages 2158-2160
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Direct observation of uniform optical properties from microphotoluminescence mapping of InGaN quantum wells grown on slightly misoriented GaN substrates
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Author keywords
[No Author keywords available]
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Indexed keywords
DIRECT OBSERVATION;
GAN SUBSTRATE;
HIGH-CRYSTALLINE QUALITY;
INGAN QUANTUM WELLS;
MICROPHOTOLUMINESCENCE;
MIS-ORIENTATION;
MISORIENTATION ANGLE;
PEAK ENERGY;
ROOM TEMPERATURE;
FULL WIDTH AT HALF MAXIMUM;
GALLIUM NITRIDE;
MAPPING;
OPTICAL PROPERTIES;
SEMICONDUCTOR QUANTUM WELLS;
SEMICONDUCTOR QUANTUM WIRES;
GALLIUM ALLOYS;
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EID: 67649711184
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200778500 Document Type: Conference Paper |
Times cited : (9)
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References (11)
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