Reduction of threshold current density of wurtzite GaN/AlGaN quantum well lasers by uniaxial strain in (0001) plane

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 8 PART A, 1996, Pages

  Suzuki, Masakatsu ^a   Uenoyama, Takeshi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

GaN AlGaN quantum well lasers; k p theory; Threshold current density; Uniaxial strain; Wurtzite

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CURRENT DENSITY; ELECTRONIC PROPERTIES; MATHEMATICAL MODELS; OPTICAL PROPERTIES; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN;

ALUMINUM GALLIUM NITRIDE; BIAXIAL STRAIN; GALLIUM NITRIDE; THRESHOLD CURRENT DENSITY; UNIAXIAL STRAIN; WURTZITE;

QUANTUM WELL LASERS;

EID: 0030212933     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l953     Document Type: Article

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