SCOPUS 정보 검색 플랫폼

Volumn 28, Issue 1, 2010, Pages 253-260

Non-destructive characterization of Ge content and Ge depth profile variations in Si1-xGex/Si by multi-wavelength Raman spectroscopy

(4) Yoo, Woo Sik a Ueda, Takeshi a Ishigaki, Toshikazu a Kang, Kitaek a

a WaferMasters Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NONDESTRUCTIVE EXAMINATION; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM;

GE CONCENTRATIONS; MICRO RAMAN SPECTROSCOPY; MONITORING AND CONTROLLING; MULTI-WAVELENGTHS; NONDESTRUCTIVE CHARACTERIZATION; RAMAN MEASUREMENTS; SPATIAL RESOLUTION; X RAY REFLECTANCE;

GERMANIUM METALLOGRAPHY;

EID: 78549296018 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.3375609 Document Type: Conference Paper

Times cited : (10)

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