Pushing the performance limits of SiGe HBT technology

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 341-353

  Khater, Marwan ^a   Adam, Thomas ^b   Rieh, Jae Sung ^c   Schonenberg, Kathryn ^a   Pagette, Francois ^a   Stein, Kenneth ^a   Jeng, Shwu Jen ^b   Ahlgren, David ^b   Freeman, Gregory ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

^c Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTOR MATERIALS;

LATERAL SCALING; VERTICAL SCALING;

SEMICONDUCTING SILICON;

EID: 33846971288     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355832     Document Type: Conference Paper

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