Stress characterization of Si by a scanning near-field optical raman microscope with spatial resolution and with penetration depth at the nanometer level, using resonant raman scattering

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 17-19, 2006, Pages

  Yoshikawa, Masanobu ^a   Murakami, Masataka ^a   Matsuda, Keiko ^a   Sugie, Ryuichi ^a   Ishida, Hideyuki ^a   Shimizu, Ryosuke ^a,b  

^a TORAY RESEARCH CENTER INC   (Japan)

^b PHOTON Design Corporation   (Japan)

Author keywords

Near field; Raman; Resonant raman; Silicon; Stress

Indexed keywords

COMPRESSIVE STRESS; OPTICAL MICROSCOPY; RAMAN SCATTERING; SILICA; STRESS ANALYSIS; VLSI CIRCUITS;

NEAR-FIELD; RESONANT RAMAN; SCANNING NEAR-FIELD OPTICAL RAMAN MICROSCOPE (SNORM); SPATIAL RESOLUTION; STRESS; STRESS CHARACTERIZATION;

SILICON;

EID: 33745308816     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L486     Document Type: Article

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