Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature

Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 11, 2010, Pages 311-313

  Kakanakova Georgieva, A ^a   Nilsson, D ^a   Stattin, M ^b   Forsberg, U ^a   Haglund, A ^b   Larsson, A ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Electrical properties; Epitaxy; High Al content AlGaN; MOCVD; P type semiconductors

Indexed keywords

AL-CONTENT; ELECTRICAL PROPERTY; EPITAXY; MOCVD; P TYPE SEMICONDUCTOR;

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; SECONDARY BATTERIES; SEMICONDUCTOR GROWTH;

ALUMINUM;

EID: 78349302346     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004290     Document Type: Letter

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