Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7216, Issue , 2009, Pages

  Amano, H ^a   Nagamatsu, K ^a   Takeda, K ^a   Mori, T ^a   Tsuzuki, H ^a   Iwaya, M ^a   Kamiyama, S ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

AlGaN; AlN; ELO; High temperature MOVPE; UV LD

Indexed keywords

ALGAN; ALN; ELO; HIGH TEMPERATURE MOVPE; UV LD;

FABRY-PEROT INTERFEROMETERS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LADDER NETWORKS; LANTHANUM COMPOUNDS; QUALITY CONTROL; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS;

MIRRORS;

EID: 65349194402     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.808381     Document Type: Conference Paper

References (13)

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